Infineon Technologies BCR410W
Active Bias Controller
MAXIMUM RATINGS
Parameter Supply voltage Output current Marking W8s 1= Vs Pin Configuration 2=GND 3=Iout 4=Sense Package SOT343 Symbol VS Iout Ptot Tj Tstg Value 18 0.5 100 150 -65 ... 150 Unit V mA mW °C Total power dissipation, TS = 110 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 470 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-21-2001 BCR410WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter DC Characteristics Additional current consumption VS = 3 V I0 200 400 µA Symbol min. Values typ. max. Unit DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage Voltage drop IC = 10 mA Change of IC versus hFE hFE = 50 Change of IC versus VS VS = 3 V Change of IC versus TA VSmin Vdrop 1.8 110 tbd 2 0.15 V mV IC /IC IC /IC IC /IC hFE / hFE %/V %/K 2 Dec-21-2001 BCR410W Collector Current IC = f (VS) of stabilized NPN Transistor Parameter Rext.