Infineon Technologies BCR48PN
NPN/PNP Silicon Digital Transistor
| Part No. | BCR48PN |
|---|---|
| Datasheet | BCR48PN Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN/PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking WTs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO NPN PNP NPN PNP NPN PNP VEBO VEBO Vi(on) Vi(on) IC IC Ptot Tj Tstg Value 50 50 10 5 50 10 70 100 250 150 -65...+150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Emitter-base voltage Input on voltage Input on voltage DC collector current DC collector current Junction temperature Storage temperature mA mW °C Total power dissipation, TS = 115 °C 1 Nov-29-2001 BCR48PN Thermal Resistance Junction - soldering point 1) RthJS 140 K/WELECTRICAL CHARACTERISTICS
at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics for NPN Type Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5...
