Infineon Technologies BCR505
NPN Silicon Digital Transistor
MAXIMUM RATINGS
Parameter Symbol Value Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Tj Tstg 50 50 20 5 500 330 150 -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-07-28 BCR505ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)C