Datasheet4U.com

BCR583 Datasheet PDF

Infineon Technologies BCR583

PNP Silicon Digital Transistor

Part No. BCR583
Datasheet BCR583 Download
Manufacturer
Infineon Technologies
Description PNP Silicon Digital Transistor
Buy Stock & Price
BCR583 datasheet page 1 preview

MAXIMUM RATINGS

Parameter Symbol Value Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Tj Tstg 50 50 50 10 500 330 150 -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-07-28 BCR583

ELECTRICAL CHARACTERISTICS

at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)C
BCR583 page 2 preview BCR583 page 3 preview