Infineon Technologies BCW60A
NPN Silicon AF Transistors
| Part No. | BCW60A |
|---|---|
| Datasheet | BCW60A Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Peak base current Total power dissipation , TS = 71 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IBM Ptot Tj Tstg BCW60 32 32 5 BCW60FF BCX70 32 32 5 100 200 200 330 150 -65 ... 150 Unit V 45 45 5 mA mW °C Thermal Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. VELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application Note Thermal Resistance typ. V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 - BCW60/60FF BCX70 BCW60/60FF BCX70 2 Jan-29-2002 BCW60, BCX70ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Symbol Values Parameter min.
