Infineon Technologies BCX51
PNP Silicon AF Transistors
| Part No. | BCX51 |
|---|---|
| Datasheet | BCX51 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage BCX51 BCX52 BCX53 Symbol VCEO Value 45 60 80 Collector-base voltage BCX51 BCX52 BCX53 VCBO 45 60 100 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipation TS ≤ 120 °C VEBO IC ICM IB IBM Ptot 5 1 1.5 100 200 2 Junction temperature Tj 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-07-29 BCX51...-BCX53...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCX51 IC = 10 mA, IB = 0 , BCX52 IC = 10 mA, IB = 0 , BCX53 V(BR)CEO 45 60 80 - - Unit V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCX51 IC = 100 µA, IE = 0 , BCX52 I...
