BF5020 Datasheet | Infineon

Silicon N-Channel MOSFET Tetrode - Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage - Integrated gate protection diodes - Excellent noise figure - High gain, high forward transadmittance - Improved cross modulation at gain reduction - Pb-free (Ro HS pliant) package - Qualified according AEC Q101 BF5020... 2 1 AGC G2 HF G1 Input RG1 Drain GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration SOT143 1 = S 2 = D 3 = G2 4 = G1 - - BF5020R SOT143R 1 = D 2 = S 3 = G1 4 = G2 - - BF5020W SOT343 1 = D 2 = S 3 = G1 4 = G2 - - Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Storage temperature Channel temperature Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot Tstg Tch Value 8 25 ± 10 ±6 200 200 -55 ... 150 150 HF Output + DC EHA07461 Marking KYs KYs KYs Unit V m A m A V m...