• Part: BF888
  • Description: High Performance Bipolar NPN Transistor
  • Manufacturer: Infineon
  • Size: 499.02 KB
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Datasheet Summary

High Performance Bipolar NPN RF Transistor - High transducer gain of typ. 14 dB @ 25 mA,6 GHz - Low minimum noise figure of typ. 0.85 dB @ 6GHz - High output pression of typ. 11 dBm @ 25 mA 2 1 - Pb-free (RoHS pliant) package - For a wide range of non-automotive applications - 2nd and 3rd LNA stage and mixer stage in LNB - 5.8 GHz analog/digital cordless phone - Satellite radio SDARS - WLAN, WiMAX, UWB ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF888 Marking Pin Configuration RYs 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter...