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BFP410
Surface mount wideband silicon NPN RF bipolar transistor
Product description
The BFP410 is a low noise device based on a grounded emitter (SIEGET™) that is part
of Infineon’s established fourth generation RF bipolar transistor family. Its transition
frequency frequency
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Feature list
• Minimum noise figure NFmin = 1.2 dB at 2 GHz, 2 V, 2 mA • High gain Gms = 21.5 dB at 2 GHz, 2 V, 20 mA • OIP3 = 23.5 dBm at 2 GHz, 2 V, 20 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for industrial applications according to the relevant tests of AEC-Q 101.
BFP410 Datasheet
