• Part: BFP410
  • Description: Low Noise Silicon Bipolar RF Transistor
  • Manufacturer: Infineon
  • Size: 1.51 MB
Download BFP410 Datasheet PDF
Infineon
BFP410
BFP410 is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP410 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency frequency foTsocifll2a5toGrHs.zIat nredmloawinscucrorsetnctocmhapreatcittievreiswtiictshomuatkceotmheprdoemviicseinsguoitnabelaesfeoorfhuigshe. Feature list - Minimum noise figure NFmin = 1.2 dB at 2 GHz, 2 V, 2 mA - High gain Gms = 21.5 dB at 2 GHz, 2 V, 20 mA - OIP3 = 23.5 dBm at 2 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and...