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BFP410 - Low Noise Silicon Bipolar RF Transistor

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Part number BFP410
Manufacturer Infineon
File Size 1.51 MB
Description Low Noise Silicon Bipolar RF Transistor
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Description

The BFP410 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family.Its transition frequency frequency foTsocifll2a5toGrHs.zIat nredmloawinscucrorsetnctocmhapreatcittievreiswtiictshomuatkceotmheprdoemviicseinsguoitnabelaesfeoorfhuigshe.Feature list Minimum noise figure NFmin = 1.2 dB at 2 GHz, 2 V, 2 mA High gain Gms = 21.5 dB at 2 GHz, 2 V, 20 mA OIP3 = 23.5 dBm at 2 GHz

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