BFP650F Description
Linear Low Noise SiGe:C Bipolar RF Transistor For medium power amplifiers and driver stages Based on Infineon' s reliable high volume Silicon Germanium technology High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. 150 Unit V mA mW °C Parameter Junction - soldering point2) Symbol RthJS Value 130 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.