BFP650F datasheet by Infineon.
| Part number | BFP650F |
|---|---|
| Datasheet | BFP650F-Infineon.pdf |
| File Size | 544.79 KB |
| Manufacturer | Infineon |
| Description | Linear Low Noise SiGe:C Bipolar RF Transistor |
|
|
Linear Low Noise SiGe:C Bipolar RF Transistor For medium power amplifiers and driver stages Based on Infineon' s reliable high volume Silicon Germanium technology High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. 150 Unit V mA mW °C Parameter Junction - soldering point2) Symbol RthJS Value 130 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BFP650 | High Linearity Silicon Germanium Bipolar RF Transistor | Infineon Technologies AG |
| Part Number | Description |
|---|---|
| BFP620 | Surface mount high linearity silicon NPN RF bipolar transistor |
| BFP640ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor |
| BFP640FESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor |
| BFP194 | PNP Silicon RF Transistor |
| BFP410 | Low Noise Silicon Bipolar RF Transistor |
| BFP420 | Surface mount wideband silicon NPN RF bipolar transistor |
| BFP450 | Surface mount high linearity wideband silicon NPN RF bipolar transistor |
| BFP540ESD | Low Noise Silicon Bipolar RF Transistor |
| BFP720 | NPN RF bipolar transistor |
| BFP720ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor |
