BFP650F
BFP650F is Linear Low Noise SiGe:C Bipolar RF Transistor manufactured by Infineon.
Linear Low Noise SiGe:C Bipolar RF Transistor
- For medium power amplifiers and driver stages
- Based on Infineon' s reliable high volume Silicon
Germanium technology
- High OIP3 and P-1dB
- Ideal for low phase noise oscilators
- Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
Minimun noise figure NFmin = 0.8 dB at 1.8 GHz
- Pb-free (RoHS pliant) and halogen-free thin small flat package with visible leads
- Qualification report according to AEC-Q101 available
3 2
4 1
Top View
XYs
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP650F
Marking
Pin Configuration
R5s 1=B 2=E 3=C 4=E
- -
Package TSFP-4
1...
