Infineon Technologies BFR360
NPN Silicon RF Transistor
| Part No. | BFR360 |
|---|---|
| Datasheet | BFR360 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 98°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) Marking FBs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150 Value Package TSFP-3 Unit V mA mW °C Unit K/W 250 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-16-2003 BFR360FELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 15 mA, VCE = 3 V hFE 60 130 200 IEBO 1 µA ICBO 100 nA ICES 10 µA V(BR)CEO 6 9 V Symbol min.
