Infineon Technologies BFR360L3
Low Noise Silicon Bipolar RF Transistor
| Part No. | BFR360L3 |
|---|---|
| Datasheet | BFR360L3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Low Noise Silicon Bipolar RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 104°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 6 15 15 2 35 4 210 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 220 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2013-09-03 BFR360L3ELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 3 V, pulse measured V(BR)CEO 6 9 ICES -- ICBO -- IEBO -- hFE 90 120 max.
