BFR460L3 Datasheet PDF | Infineon Technologies

Infineon Technologies BFR460L3

the BFR460L3 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device.

Part No.	BFR460L3
Datasheet	BFR460L3 Download
Manufacturer	Infineon Technologies
Description	Low Noise Silicon Bipolar RF Transistor
Buy	Stock & Price

MAXIMUM RATINGS

at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 108°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the collector lead at the soldering point to the pcb Value 4.5 4.2 15 15 1.5 50 5 200 150 -55 ... 150 Unit V mA mW °C 1 2013-09-13 BFR460L3 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W

ELECTRICAL CHARACTERISTICS

at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3 V, pulse measured V(BR)CEO 4.5 5.8 -V...