BFR750L3RH Description
Linear Low Noise SiGe:C Bipolar RF Transistor High gain ultra low noise RF transistor Based on Infineon's reliable high volume Silicon Germanium technology Provides outstanding performance for a wide range of wireless applications up to 10 GHz Ideal for WLAN and all 5-6 GHz applications High OIP3 and P-1dB for driver stages High maximum stable and available gain Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz Pb-free...