Datasheet Summary
Linear Low Noise SiGe:C Bipolar RF Transistor
- High gain ultra low noise RF transistor
- Based on Infineon's reliable high volume Silicon
Germanium technology
- Provides outstanding performance for a wide range of wireless applications up to 10 GHz
- Ideal for WLAN and all 5-6 GHz applications
- High OIP3 and P-1dB for driver stages
- High maximum stable and available gain
Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz
- Pb-free (RoHS pliant) and halogen-free very thin small leadless package (package height 0.32 mm max. ideal for modules)
- Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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