Infineon Technologies BFS17P
NPN Silicon RF Transistor
| Part No. | BFS17P |
|---|---|
| Datasheet | BFS17P Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
FEATURES
● Maximum collector-emitter voltage VCE0 = 15 V● Maximum collector current IC = 25 mA
● Noise figure NF = 3.5 dB
● 3rd order output intercept point OIP3 = 21.5 dBm
● 1 dB output compression point P-1dB = 10 dBm
● Transition frequency fT = 1.4 GHz
● Maximum total power dissipation Ptot = 280 mW
● Package: SOT23
● Pb-free (RoHS compliant) package Potential
APPLICATIONS
● For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA● For mixers and oscillators in sub-GHz applications Device Information ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type / Ordering code Marking Pin Configuration BFS17P / BFS17PE6327HTSA1 MCs 1=B 2=E 3=C Package SOT23 Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Table of contents Table of contents
FEATURES
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