Infineon Technologies BFS460L6
NPN Silicon RF TWIN Transistor
| Part No. | BFS460L6 |
|---|---|
| Datasheet | BFS460L6 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon RF TWIN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking Pin Configuration Package AB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO 4.5 4.2 VCES VCBO VEBO IC IB Ptot Tj TA T stg 15 15 1.5 50 5 200 150 -65 ... 150 -65 ... 150 mW °C mA Value Unit V Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 104°C Junction temperature Ambient temperature Storage temperature 1T is measured on the collector lead at the soldering point to the pcb S 1 Jun-15-2004 BFS460L6 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 230 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance Unit max.
