Infineon Technologies BFS466L6
NPN Silicon RF TWIN Transistor
| Part No. | BFS466L6 |
|---|---|
| Datasheet | BFS466L6 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon RF TWIN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking Pin Configuration Package AC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO 4.5 6 VCES 15 15 VCBO 15 15 VEBO 1.5 2 IC 50 35 1 Sep-01-2003 Value Collector-emitter voltage TR1 TR2 Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 Unit V mA BFS466L6MAXIMUM RATINGS
Parameter Base current TR1 TR2 Total power dissipation1) TR1, TS ≤ 104°C TR2, TS ≤ 102°C Junction temperature TR1 TR2 Ambient temperature TR1 TR2 Storage temperature TR1 TR2 Thermal Resistance Parameter Junction - soldering point 2) TR1 TR2 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance Symbol IB Value 5 4 Unit mA Ptot mW 200 210 Tj °C 150 150 TA -65 ... 150 -65 ... 150 T stg -65 ... 150 -65 ... 150 Symbol RthJS ≤ 230 ≤ 230 Value Unit K/W 2 Sep-01-2003 BFS466L6ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min.
