Infineon Technologies BFS483
Low Noise Silicon Bipolar RF Transistor
| Part No. | BFS483 |
|---|---|
| Datasheet | BFS483 Download |
| Manufacturer |  Infineon Technologies |
| Description | Low Noise Silicon Bipolar RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 40 °C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg Value 12 20 20 2 65 5 450 150 -65 ... 150 -65 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 245 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - -V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 70 100 140 - 1TS is measured on the collect...
