Infineon Technologies BFY180
HiRel NPN Silicon RF Transistor
| Part No. | BFY180 |
|---|---|
| Datasheet | BFY180 Download |
| Manufacturer |  Infineon Technologies |
| Description | HiRel NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 176°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 8 15 15 2 4 0.5 30 200 -65...+200 -65...+200 1) Unit V V V V mA mA mW °C °C °C K/W < 805 Notes.: 1) The maximum permissible base current for VFBE measurements is 3mA (spotmeasurement duration < 1s) 2) At TS = + 176 °C. For TS > + 176 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb.ELECTRICAL CHARACTERISTICS
at TA=25°C; unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 10 V, IE = 0 Collector-emitter cutoff current VCE = 8 V, IB = 0,05µA VCB = 8 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 8V Semiconductor Group 2 of 5 Draft B, September 99 1.) Symbol min.
