Infineon Technologies BFY182
HiRel NPN Silicon RF Transistor
| Part No. | BFY182 |
|---|---|
| Datasheet | BFY182 Download |
| Manufacturer |  Infineon Technologies |
| Description | HiRel NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3.) TS ≤ 136°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 35 4 1) Unit V V V V mA mA mW °C °C °C K/W 250 200 -65...+200 -65...+200 < 255 Notes.: 1) The maximum permissible base current for VFBE measurements is 20mA (spotmeasurement duration < 1s) 2) At TS = + 136 °C. For TS > + 136 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb.ELECTRICAL CHARACTERISTICS
at TA=25°C; unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0.2µA VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 12V Semiconductor Group 2 of 5 Draft B, September 1999 1.) Symbol min.
