Infineon Technologies BFY183
The maximum permissible base current for VFBE measurements is 20mA (spot-measurement duration < 1s) 2 For TS > 99 °C derating is required.| Part No. | BFY183 |
|---|---|
| Datasheet | BFY183 Download |
| Manufacturer |  Infineon Technologies |
| Description | HiRel NPN Silicon RF Transistor |
| Buy | Stock & Price |
FEATURES
4● For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
● Hermetically sealed microwave package
● fT= 8GHz F = 2.3 dB at 2 GHz 1 Product validation
● Space Qualified ESCC Detail Spec. No.: 5611/006 Type Variant No. 05
DESCRIPTION
ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY183(ES) BFY183(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc. to Chart F3 in ESCC Generic Specification No. 5010 3 2 Package Micro-X1 Datasheet Please read the Important Notice and Warnings at the end of this document 1 of 6 IFAG PSS RFS D2 HIR Issue 5, January 2022 HiRel NPN Silicon RF Transistor BFY183(ES) Table of contents Table of contentsFEATURES
....................................................................................................................................... 1 Product validation ..........................................................................................................................
