Datasheet4U Logo Datasheet4U.com

BFY450 - HiRel NPN Silicon RF Transistor

General Description

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Key Features

  • 4.
  • For Medium Power Amplifiers.
  • Compression point P-1dB = 19 dBm at 1.8 GHz Max. available gain Gma = 16dB at 1.8 GHz.
  • Hermetically sealed microwave package 1.
  • Transition Frequency fT = 20 GHz.
  • SIEGET25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Product validation.
  • Space Qualified ESCC Detail Spec. No. : 5611/008 Type Variant No. 03.

📥 Download Datasheet

Datasheet Details

Part number BFY450
Manufacturer Infineon
File Size 359.50 KB
Description HiRel NPN Silicon RF Transistor
Datasheet download datasheet BFY450 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFY40 Medium Power Amplifier/Switches Micro Electronics
BFY41 Medium Power Amplifier/Switches Micro Electronics
BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) Siemens Semiconductor Group
BFY180 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY181 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Siemens Semiconductor Group

Other Datasheets by Infineon

Part Number Description
BFY405 HiRel NPN Silicon RF Transistor
BFY420 HiRel NPN Silicon RF Transistor
BFY640-04 NPN Silicon Germanium RF Transistor
BFY650B-11 NPN Silicon Germanium RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BFY450 HiRel NPN Silicon RF Transistor BFY450(ES) Features 4  For Medium Power Amplifiers  Compression point P-1dB = 19 dBm at 1.8 GHz Max. available gain Gma = 16dB at 1.8 GHz  Hermetically sealed microwave package 1  Transition Frequency fT = 20 GHz  SIEGET25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Product validation  Space Qualified ESCC Detail Spec. No.: 5611/008 Type Variant No. 03 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY450(ES) BFY450(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc.