BFY450 Datasheet | Infineon

Hi Rel NPN Silicon RF Transistor BFY450(ES) Features - For Medium Power Amplifiers - pression point P-1d B = 19 d Bm at 1.8 GHz Max. available gain Gma = 16d B at 1.8 GHz - Hermetically sealed microwave package - Transition Frequency f T = 20 GHz - SIEGET25-Line Infineon Technologies Grounded Emitter Transistor25 GHz f T-Line Product validation - Space Qualified ESCC Detail Spec. No.: 5611/008 Type Variant No. 03 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type ment Pin Configuration BFY450(ES) BFY450(P)1 For flight use Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc. to Chart F3 in ESCC Generic Specification No. 5010 3 2 Package Micro-X Datasheet .infineon. Please read the Important Notice and Warnings at the end of this document 1 of 6 IFAG PSS RFS D2 HIR Issue 5, January 2022 Hi Rel NPN Silicon RF...