BFY640-04 Datasheet | Infineon

Hi Rel NPN Silicon Germanium RF Transistor - Hi Rel Discrete and Microwave Semiconductor - High gain low noise RF transistor - High maximum stable gain: Gms 24d B at 1.8 GHz - Noise figure F = 0.8 d B at 1.8 GHz Noise figure F = 1.1 d B at 6 GHz - Hermetically sealed microwave package - Space Qualified ESCC Detail Spec. No.: 5611/009 BFY640-04 3 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY640-04 Marking - Pin Configuration Package 4 E Micro-X Maximum Ratings Parameter Collector-emitter voltage Ta > 0 °C Ta ≤ 0 °C Collector-base voltage Emitter-base voltage Collector current 1) Base current Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 2) Symbol VCEO VCBO VEBO IC IB Tj Top Tstg Values 4.0 3.7 13 1.2 50 3 175 -65...+175 -65...+175 Rth JS Notes.: 1) For TS ≤ 110°C. For TS > 110 °C derating is required. 2) TS is measured on the emittter lead at the soldering point to the pcb. IFAG PMM RFS D HIR 1 of...