BFY650B-11 Description
HiRel NPN Silicon Germanium RF Transistor 4 HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz 1 Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package Space Qualified ESCC Detail Spec. 5611/010 BFY650B-11 3 2 ESD:.