BFY650B-11 - NPN Silicon Germanium RF Transistor

Infineon

Datasheet Details

Part number	BFY650B-11
Manufacturer	Infineon
File Size	158.43 KB
Description	NPN Silicon Germanium RF Transistor
Datasheet	BFY650B-11 Datasheet

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Full PDF Text Transcription (Reference)

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HiRel NPN Silicon Germanium RF Transistor 4  HiRel Discrete and Microwave Semiconductor  For high power amplifiers  Ideal for low phase noise oscilators  Maximum available gain: Gma = 19 dB at 1.8 GHz 1 Noise figure F = 0.9 dB at 1.8 GHz  Hermetically sealed microwave package  Space Qualified ESCC Detail Spec. No.