BFY650B-11
BFY650B-11 is NPN Silicon Germanium RF Transistor manufactured by Infineon.
Hi Rel NPN Silicon Germanium RF Transistor
- Hi Rel Discrete and Microwave Semiconductor
- For high power amplifiers
- Ideal for low phase noise oscilators
- Maximum available gain: Gma = 19 d B at 1.8 GHz
Noise figure F = 0.9 d B at 1.8 GHz
- Hermetically sealed microwave package
- Space Qualified
ESCC Detail Spec. No.: 5611/010
BFY650B-11 3 2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type BFY650B-11
Marking
- Pin Configuration
Package 4 E Micro-X
Maximum Ratings Parameter Collector-emitter voltage Ta > 0 °C Ta ≤ 0 °C Collector-base voltage Emitter-base voltage Collector current 1) Base current Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance Junction-soldering point 2)
Symbol VCEO
VCBO VEBO IC IB Tj Top Tstg
Values
4.0 3.7 13 1.2 150 10 175 -65...+175 -65...+175
Rth JS
Notes.:
1) For TS ≤ 85°C. For TS > 85 °C derating is required.
2) TS is measured on the emitter lead at the soldering point to the pcb.
IFAG PMM RPD D HIR
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