Infineon Technologies BG3140
DUAL N-Channel MOSFET Tetrode
| Part No. | BG3140 |
|---|---|
| Datasheet | BG3140 Download |
| Manufacturer |  Infineon Technologies |
| Description | DUAL N-Channel MOSFET Tetrode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation, TS ≤78°C Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) Symbol Rthchs Symbol VDS ID ±IG1/2SM ±V G1/G2S Ptot Tstg Tch Value 8 25 1 6 160 -55 ... 150 150 Unit V mA V mW °C Value ≤280 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-27-2004 BG3140...ELECTRICAL CHARACTERISTICS
Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 , VG2S = 0 V(BR)DS Symbol min. 12 6 6 - Values typ. 15 0.7 0.6 max. 15 15 50 50 10 - Unit V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) µA nA µA mA V Gate2-source leakage current VG2S = 8 V, V...
