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BGA10H1MN9 - High-band Low Noise Amplifier

General Description

2 3 Absolute Maximum Ratings 3 4 DC Characteristics 4 5 RF Characteristics 4 6 MIPI RFFE Specification 7 7 Application Information 17 8 Package Information 19 Disclaimer 25 Datasheet 1 Revision 2.0 2023-07-31 BGA10H1MN9 High-Band Low Noise Amplifier with Gain Steps and MIPI Contr

Key Features

  • Operating frequencies: 2.3 - 2.7 GHz.
  • Insertion power gain: 19.7 dB.
  • Low noise figure: 0.8 dB.
  • Low current consumption: 6.0 mA.
  • Support of 1.2 V and 1.8 V VDD/VIO.
  • Integrated DC block capacitors at input and output.
  • MIPI RFFE 3.0 1.1 x 1.1 mm2 Potential.

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Datasheet Details

Part number BGA10H1MN9
Manufacturer Infineon
File Size 967.05 KB
Description High-band Low Noise Amplifier
Datasheet download datasheet BGA10H1MN9 Datasheet

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BGA10H1MN9 High-Band Low Noise Amplifier with Gain Steps and MIPI Control Features • Operating frequencies: 2.3 - 2.7 GHz • Insertion power gain: 19.7 dB • Low noise figure: 0.8 dB • Low current consumption: 6.0 mA • Support of 1.2 V and 1.8 V VDD/VIO • Integrated DC block capacitors at input and output • MIPI RFFE 3.0 1.1 x 1.1 mm2 Potential Applications The BGA10H1MN9 is designed for 4G and 5G applications covering 3GPP Bands between 2.3 and 2.7 GHz (e.g. B7 and B41). As a result of high gain and an ultra-low Noise Figure performance of the LNA frontend losses can be compensated and the data rate can be significantly improved. The MIPI interface provides a comprehensive control over multiple gain modes and bias modes to increase the overall system dynamic range.