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BGA10H1MN9

BGA10H1MN9 is High-band Low Noise Amplifier manufactured by Infineon.
BGA10H1MN9 datasheet preview

BGA10H1MN9 Datasheet

Part number BGA10H1MN9
Download BGA10H1MN9 Datasheet (PDF)
File Size 967.05 KB
Manufacturer Infineon
Description High-band Low Noise Amplifier
BGA10H1MN9 page 2 BGA10H1MN9 page 3

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BGA10H1MN9 Distributor

BGA10H1MN9 Description

2 3 Ratings 3 4 DC Characteristics 4 5 RF Characteristics 4 6 MIPI RFFE Specification 7 7 Application Information 17 8 Package Information 19 Disclaimer 25 Datasheet 1 Revision 2.0 2023-07-31 BGA10H1MN9 High-Band Low Noise Amplifier with Gain Steps and MIPI.

BGA10H1MN9 Key Features

  • Operating frequencies: 2.3
  • 2.7 GHz
  • Insertion power gain: 19.7 dB
  • Low noise figure: 0.8 dB
  • Low current consumption: 6.0 mA
  • Support of 1.2 V and 1.8 V VDD/VIO
  • Integrated DC block capacitors at input and output
  • MIPI RFFE 3.0

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