BGA10H1MN9
BGA10H1MN9 is manufactured by Infineon.
High-Band Low Noise Amplifier with Gain Steps and MIPI Control
Features
- Operating frequencies: 2.3
- 2.7 GHz
- Insertion power gain: 19.7 dB
- Low noise figure: 0.8 dB
- Low current consumption: 6.0 mA
- Support of 1.2 V and 1.8 V VDD/VIO
- Integrated DC block capacitors at input and output
- MIPI RFFE 3.0
1.1 x 1.1 mm2
Potential Applications
The BGA10H1MN9 is designed for 4G and 5G applications covering 3GPP Bands between 2.3 and 2.7 GHz (e.g. B7 and B41). As a result of high gain and an ultra-low Noise Figure performance of the LNA frontend losses can be pensated and the data rate can be significantly improved. The MIPI interface provides a prehensive control over...
