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BGA427 Datasheet PDF

Infineon Technologies BGA427

Si-MMIC-Amplifier

Part No. BGA427
Datasheet BGA427 Download
Manufacturer
Infineon Technologies
Description Si-MMIC-Amplifier
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BGA427 datasheet page 1 preview

MAXIMUM RATINGS

Parameter Device current Device voltage Marking BMs 1, IN Pin Configuration 2, GND 3, +V 4, Out Package SOT343 Symbol ID VD,+V Ptot PRFin Tj TA Tstg Value 25 6 150 -10 150 -65 ... 150 -65 ... 150 Unit mA V mW dBm °C Total power dissipation TS = 120 °C RF input power Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - soldering point1) RthJS 295 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-02-2001 BGA427

ELECTRICAL CHARACTERISTICS

at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50 , Testfixture Appl.1 Insertion power gain |S21|2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz S12 NF IP3out RLin RLout 1.9 2 2.2 +7 >12 >9 dBm dB typ. max. dB 27 22 18.5 22 - Un...
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