• Part: BGA9H1BN6
  • Description: Highband High Performance LNA
  • Manufacturer: Infineon
  • Size: 671.47 KB
Download BGA9H1BN6 Datasheet PDF
Infineon
BGA9H1BN6
Features - Operating frequencies: 2.3 to 2.7 GHz - Insertion power gain: 20.3 d B - Insertion loss in bypass mode: 4.3 d B - Low noise figure: 0.6 d B - Low current consumption: Min. 2.2 m A - Multi-state control to save power 0.7 x 1.1 mm2 Potential Applications The BGA9H1BN6 is designed for 4G and 5G applications covering 3GPP bands between 2.3 and 2.7 GHz (optimized for band n41). As a result of a high gain and an ultra-low noise figure performance of the LNA the system sensitivity is significantly improved pared to conventional LNAs. The GPIO interface provides a straightforward control over multiple operation modes. Next to the high gain mode and bypass mode, a power-save and a high performance mode can be selected to increase system dynamic. Due to the low-power mode with 2.2 m A current consumption and 1.2V operation voltage the overall power consumption is extremely low. The BGA9H1BN6 is suitable to be implemented in small battery powered devices like wearables or smartphones. Pr...