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BGAV1A10 - Low Noise Amplifier

Datasheet Summary

Features

  • Operating frequencies: . - . GHz.
  • Insertion power gain: . dB.
  • Gain dynamic range: dB.
  • Low noise figure: . dB.
  • Low current consumption: . mA.
  • Multi-state control: Gain- and Bypass-Modes.
  • Small ATSLP leadless package . x . mm.

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Datasheet Details

Part number BGAV1A10
Manufacturer Infineon
File Size 475.14 KB
Description Low Noise Amplifier
Datasheet download datasheet BGAV1A10 Datasheet
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Full PDF Text Transcription

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BGAV A BGAV A Low Noise Amplifier with Gain Control Features • Operating frequencies: . - . GHz • Insertion power gain: . dB • Gain dynamic range: dB • Low noise figure: . dB • Low current consumption: . mA • Multi-state control: Gain- and Bypass-Modes • Small ATSLP leadless package . x . mm Application The LTE data rate can be significantly improved by using the high gain LNA. The integrated gain control and bypass function increases the overall system dynamic range and leads to more flexibility in the front-end. In high gain mode the BGAV A o ers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the basestation the bypass mode can be activated reducing current consumption. Thanks to the MIPI control interface, control lines are reduced to a minimum.
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