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BGB540 Datasheet PDF

Infineon Technologies BGB540

A 35 dB Gain-Sloped LNB I.F. Amplifier

Part No. BGB540
Datasheet BGB540 Download
Manufacturer
Infineon Technologies
Description A 35 dB Gain-Sloped LNB I.F. Amplifier
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BGB540 datasheet page 1 preview

FEATURES

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● Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology

APPLICATIONS

● For high gain low noise amplifiers
● Ideal for wideband applications, cellular phones, cordless telephones, SAT-TV and high frequency oscillators Bias,4 Bias C,3

DESCRIPTION

SIEGET®-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias . B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGB540 Data sheet Package SOT343 Marking MCs 4 Chip T0559 2002-09-11 BGB540

MAXIMUM RATINGS

Parameter Maximum collector-emitter voltage Maximum collector current Maximum bias current Maximum emitter-base voltage Maximum base current Total power dissipation, TS < 75°C1) Junction temperature Ambient temperature Storage temperature Thermal resistance: junction-soldering point Symb...
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