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BGS12P2L6 Datasheet

Manufacturer: Infineon
BGS12P2L6 datasheet preview

Datasheet Details

Part number BGS12P2L6
Datasheet BGS12P2L6-Infineon.pdf
File Size 853.28 KB
Manufacturer Infineon
Description SPDT General purpose Switch
BGS12P2L6 page 2 BGS12P2L6 page 3

BGS12P2L6 Overview

The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from 0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL patible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is...

BGS12P2L6 Key Features

  • High linearity up to 37 dBm input power
  • Low insertion loss and high port to port isolation up to 6 GHz
  • Low current consumption
  • On-chip control logic
  • Ultra low profile leadless plastic package
  • RoHS and WEEE pliant package

BGS12P2L6 Applications

  • High linearity up to 37 dBm input power
  • Low insertion loss and high port to port isolation up to 6 GHz
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BGS12P2L6 Distributor

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