BGS12P2L6 Description
The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from 0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL patible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is...
BGS12P2L6 Key Features
- High linearity up to 37 dBm input power
- Low insertion loss and high port to port isolation up to 6 GHz
- Low current consumption
- On-chip control logic
- Ultra low profile leadless plastic package
- RoHS and WEEE pliant package
BGS12P2L6 Applications
- High linearity up to 37 dBm input power
- Low insertion loss and high port to port isolation up to 6 GHz