BGSX22G2A10
Description
The BGSX22G2A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports.
Key Features
- RF CMOS DPDT antenna cross switch with power handling capability of up to 36.5 dBm
- Suitable for multi-mode LTE and WCDMA multi antenna applications
- Ultra-low insertion loss and harmonics generation
- 0.1 to 6.0 GHz coverage
- High port-to-port-isolation
- No decoupling capacitors required if no DC applied on RF lines
- General Purpose Input-Output (GPIO) Interface
- Small form factor 1.15mm x 1.55mm
- No power supply blocking required
- High EMI robustness
