BGT24AT2 Datasheet | Infineon

Features - 24 GHz signal source with 2 transmitter outputs and 1 local oscillator output - External / internal phase inversion and RF pulsing capability - Programmable gain amplifiers (PGA) with 6 bit resolution - Fully integrated low phase noise VCO - Frequency divider with 23.5 MHz output - On chip RF level and temperature sensors - Muliplexed output of analog sensor signals - Single ended RF terminals - Single supply voltage: 3.3 V typ. - Low power consumption: 775 m W typ. - 200 GHz bipolar Si Ge:C technology b7hf200 - Fully ESD protected device - VQFN-32-9 leadless plastic package including lead-tip-inspection (LTI) feature Description The BGT24AT2 is a low phase noise 24 GHz ISM band multifunction signal source, manufactured in a monolithic Silicon Germanium semiconductor process technology. It acmodates a 24 GHz fundamental voltage controlled oscillator and a frequency divider with a division ratio of 1024. The frequency divider output is differential. The three individual RF outputs generate a typical output power of +10 d Bm, adjustable via SPI-programmable 6 bit DAC’s. Fast pulsing and phase inversion of the transmit signal is provided either using dedicated control inputs or the 64 bit SPI. Automatic configuration of the LO-output is possible using a dedicated logic. RF output level sensors as well as a temperature sensor are implemented for monitoring purposes. The analog sensor signals along with an additional optional analog input are multiplexed to one mon output. The MMIC is manufactured in a 200 GHz, 0.18μm Si Ge:C technology and is packaged in a 32 pin leadless Ro HS pliant VQFN package with LTI feature . Product Validation Qualified for Automotive Applications. Product Validation according to AEC-Q100/101. Product Name BGT24AT2 Package VQFN32-9 Chip T1824 Marking BGT24AT2 Data Sheet .infineon. Please read the Important Notice and Warnings at the end of this document 3.4 2019-12-05 Silicon Germanium 24 GHz Transmitter MMIC Revision...