• Part: BSB013NE2LXI
  • Description: n-Channel Power MOSFET
  • Manufacturer: Infineon
  • Size: 540.01 KB
Download BSB013NE2LXI Datasheet PDF
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Datasheet Summary

OptiMOSTM Power-MOSFET Features - Optimized SyncFET for high performance Buck converter - Integrated monolithic Schottky like diode - Low profile (<0.7 mm) - 100% avalanche tested - 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 25 1.3 163 39 62 - Double-sided cooling - patible with DirectFET® package MX footprint and outline 1) - Qualified according to JEDEC2) for target applications CanPAKTM M MG-WDSON-2 - Pb-free lead plating; RoHS pliant V mW A nC nC Type BSB013NE2LXI Package MG-WDSON-2 Outline MX Marking 02E2 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain...