• Part: BSB053N03LPG
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 307.33 KB
Download BSB053N03LPG Datasheet PDF
Infineon
BSB053N03LPG
Features - Pb-free plating; Ro HS pliant - Dual sided cooling - Low profile (<0.7 mm) - 100% avalanche tested - Qualified for consumer level application - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Optimized for high switching frequency DC/DC converter - Low parasitic inductance Product Summary V DS R DS(on),max ID 30 5.3 71 V mΩ A MG-WDSON-2 - patible with Direct FET® package MP footprint and outline 1) Type BSB053N03LP G Package MG-WDSON-2 Outline MP Marking 3003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R th JA=55 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) TM Value 71 45 17 284 50 75 ±20 Unit A I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=44 A, R GS=25 Ω m J V Can PAK uses Direct FET ® technology licensed from...