• Part: BSB056N10NN3G
  • Description: n-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.56 MB
Download BSB056N10NN3G Datasheet PDF
Infineon
BSB056N10NN3G
Description Opti MOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make Opti MOS™ 100V the best choice forthe demanding requirements of voltage regulator solutions in Solar, Drives, Data and Tele applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Opti MOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. Features - - - - - - - - - Optimized for high switching frequency DC/DC converter Excellent Qg x RDS(on) product (FOM) Very low on-resistance RDS(on) Pb-free plating; Ro HS pliant Halogen-free according to IEC61249-2-21 Double sided cooling patible with Direct FET® package MN footprint and outline1) Low parasitic inductance Low profile (<0.7...