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BSB056N10NN3G - n-Channel Power MOSFET

Description

OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Features

  • Optimized for high switching frequency DC/DC converter Excellent Qg x RDS(on) product (FOM) Very low on-resistance RDS(on) Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double sided cooling Compatible with DirectFET® package MN footprint and outline1) Low parasitic inductance Low profile (.

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Datasheet Details

Part number BSB056N10NN3G
Manufacturer Infineon
File Size 1.56 MB
Description n-Channel Power MOSFET
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n-Channel Power MOSFET OptiMOS™ BSB056N10NN3 G Data Sheet 2.3, 2011-02-28 Final Industrial & Multimarket Free Datasheet http://www.datasheet4u.com/ OptiMOS™ Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 100V the best choice forthe demanding requirements of voltage regulator solutions in Solar, Drives, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.
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