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BSC004NE2LS5 Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 25 V
Features
• Optimized for OR‑ing application • Very low on‑resistance RDS(on) @ VGS=4.5 V • 100% avalanche tested • Superior thermal resistance • N‑channel • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key performance parameters
Parameter
Value
Unit
VDS
25
V
RDS(on),max
0.45
mΩ
ID
479
A
Qoss
70
nC
QG(0V..4.5V)
135
nC
Type / Ordering code BSC004NE2LS5
Package PG‑TDSON‑8
PG‑TDSON‑8
8 7
6
5
5 6
7
8
Pin 1
2 3 4
4 3 2 1
Drain Pin 5-8, tab
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Marking 04NE2LS5
Related links ‑
Datasheet
https://www.infineon.
BSC004NE2LS5 Datasheet
