Datasheet Summary
Public
BSC004NE2LS5 Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 25 V
Features
- Optimized for OR‑ing application
- Very low on‑resistance RDS(on) @ VGS=4.5 V
- 100% avalanche tested
- Superior thermal resistance
- N‑channel
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key performance parameters
Parameter
Value
Unit
RDS(on),max
0.45 mΩ
Qoss
70 nC
QG(0V..4.5V)
135 nC
Type / Ordering code BSC004NE2LS5
Package PG‑TDSON‑8
PG‑TDSON‑8
8 7
5 6
Pin...