Datasheet Summary
MOSFET
OptiMOSTM5Power-Transistor,30V
Features
- Verylowon-resistanceRDS(on)@VGS=4.5V
- Optimizedchargesforfastswitching
- OptimizedQGD/QGSforinducedturnonruggedness
- Superiorthermalresistance
- N-channel
- 100%avalanchetested
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
0.55 mΩ
Qoss
70 nC
QG(0V..4.5V)
59 nC
PG-TDSON-8
8 7
5 6
Pin 1
2 3 4
4 3 2 1
Drain Pin...