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BSC005N03LS5 - MOSFET

General Description

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Key Features

  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Optimized charges for fast switching.
  • Optimized QGD/QGS for induced turn on ruggedness.
  • Superior thermal resistance.
  • N-channel.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC005N03LS5 MOSFET OptiMOSTM5Power-Transistor,30V Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.55 mΩ ID 433 A Qoss 70 nC QG(0V..4.