Datasheet Summary
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
- Optimizedforsynchronousapplication
- Verylowon-resistanceRDS(on)
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- 175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
0.7 mΩ
Qoss
103 nC
QG(0V..10V)
94 nC
QG(0V..4.5V)
45 nC
PG-TDSON-8
8 7
5 6
Pin 1
2 3...