Infineon Technologies BSC016N03LSG
Power-Transistor
| Part No. | BSC016N03LSG |
|---|---|
| Datasheet | BSC016N03LSG Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Fast switching MOSFET for SMPS● Optimized technology for DC/DC converters
● Qualified according to JEDEC1) for target applications
● N-channel Product Summary V DS R DS(on),max ID 30 V 1.6 mΩ 100 A PG-TDSON-8
● Logic level
● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● Superior thermal resistance
● Avalanche rated
● Pb-free plating; RoHS compliant;
● Halogen-free according to IEC61249-2-21 Type Package Marking BSC016N03LS G PG-TDSON-8 016N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 100 A 100 Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W2) I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 100 100 32 400 50 290 mJ 6 kV/µs ±20 V Rev.
