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BSC018NE2LSI - Power MOSFET

Features

  • Optimized for high performance Buck converter.
  • Monolithic integrated Schottky like diode.
  • Very low on-resistance R DS(on) @ V GS=4.5 V.
  • 100% avalanche tested.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC018NE2LSI Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 25 V 1.8 mW 100 A 23 nC 36 nC PG-TDSON-8 Type BSC018NE2LSI Package PG-TDSON-8 Marking 018NE2LI Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C 100 A 97 100 V GS=4.
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