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BSC0303LS - MOSFET

General Description

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Key Features

  • N-channel, logic level.
  • 100% avalanche tested.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Ideal for high-frequency switching and synchronous rectification.
  • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC0303LS MOSFET OptiMOSTM3Power-Transistor,120V Features •N-channel,logiclevel •100%avalanchetested •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 12 mΩ ID 68 A Qoss 51 nC QG(0V..10V) 51 nC SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC0303LS Package PG-TDSON-8 Marking 0303LS RelatedLinks - Final Data Sheet 1 Rev.2.