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BSC036NE7NS3G - 75V MOSFET

Download the BSC036NE7NS3G datasheet PDF. This datasheet also covers the BSC036NE7NS3 variant, as both devices belong to the same 75v mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • Optimized technology for synchronous rectification.
  • Ideal for high frequency switching and DC/DC converters.
  • Excellent gate charge x RDS(on) product (FOM).
  • Superior thermal resistance.
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSC036NE7NS3-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BSC030N03LSG 30V MOSFET Infineon Technologies AG
BSC030N03MSG Power Transistor Infineon Technologies AG
BSC030N04NSG 40V MOSFET Infineon Technologies AG
BSC030P03NS3G Power Transistor Infineon Technologies AG
BSC031N06NS3G Power Transistor Infineon Technologies AG

Other Datasheets by Infineon

Part Number Description
BSC036NE7NS3 75V MOSFET
BSC0303LS MOSFET
BSC030N03LS 30V MOSFET
BSC030N04NS 40V MOSFET
BSC030N08NS5 80V MOSFET

Full PDF Text Transcription

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BSC036NE7NS3G MOSFET OptiMOSTM3Power-Transistor,75V Features •Optimizedtechnologyforsynchronousrectification •IdealforhighfrequencyswitchingandDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 75 V RDS(on),max 3.6 mΩ ID 159 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC036NE7NS3 G Package PG-TDSON-8 Marking 036NE7NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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