BSC037N08NS5
Description
2 Revision 2.4 2024‑05‑11 Public OptiMOS™ 5 Power‑Transistor, 80 V BSC037N08NS5 1 unless otherwise specified Table 2 Parameter Symbol Continuous drain current 1) ID Pulsed drain current 3) Avalanche energy, single pulse 4) Gate source voltage ID,pulse EAS VGS Power dissipation Ptot Operating and storage temperature Tj, Tstg Values Unit Note/ Test Condition Min.
Key Features
- Optimized for high performance SMPS, e.g. sync. rec
- 100% avalanche tested
- Superior Product validation
