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OptiMOSTM3 Power-Transistor
Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
BSC046N10NS3 G
Product Summary
VDS RDS(on),max ID
100 V 4.
BSC046N10NS3G Datasheet
