BSC046N10NS3G Overview
OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS pliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSC046N10NS3 G Product Summary VDS RDS(on),max ID...
BSC046N10NS3G Key Features
- Very low gate charge for high frequency
BSC046N10NS3G Applications
- Optimized for dc-dc conversion