BSC050NE2LS
Description
inal Data Sheet 2 Rev.2.4,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC050NE2LS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current ID Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID,pulse IAS EAS VGS Ptot Tj,Tstg Min.
Key Features
- OptimizedforhighperformanceBuckconverter
- Verylowon-resistanceRDS(on)@VGS=4.5V
- 100%avalanchetested
- Superiorthermalresistance
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
