BSC052N08NS5
Description
inal Data Sheet 2 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min.
Key Features
- OptimizedforhighperformanceSMPS,e.g.sync.rec
- 100%avalanchetested
- Superiorthermalresistance
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
