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BSC059N04LS6 - 40V MOSFET

General Description

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Key Features

  • Optimized for synchronous.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC059N04LS6 MOSFET OptiMOSTM6Power-Transistor,40V Features •Optimizedforsynchronousapplication •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated ProductValidation Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 5.9 mΩ ID 59 A Qoss 10.2 nC QG(0V..10V) 9.4 nC QG(0V..4.5V) 4.