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BSC060N10NS3G - Power-MOSFET

Key Features

  • Very low gate charge for high frequency.

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Full PDF Text Transcription for BSC060N10NS3G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC060N10NS3G. For precise diagrams, and layout, please refer to the original PDF.

OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate ch...

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zed for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSC060N10NS3 G Product Summary V DS R DS(on),max ID 100 V 6 mΩ 90 A PG-TDSON-8 Type BSC060N10NS3 G Package PG-TDSON-8 Marking 060N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W2) Pulsed drain current3) Avalanc

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