BSC060P03NS3EG - Power-MOSFET

Features

single P-Channel in SuperSO8.
Qualified according JEDEC1) for target.

Infineon

Datasheet Details

Part number	BSC060P03NS3EG
Manufacturer	Infineon
File Size	281.93 KB
Description	Power-MOSFET
Datasheet	BSC060P03NS3EG Datasheet
Additional preview pages of the BSC060P03NS3EG datasheet.

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Full PDF Text Transcription

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OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC1) for target applications • 150 °C operating temperature • 100% Avalanche rated • V GS=25 V, specially suited for notebook applications • ESD protected • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 BSC060P03NS3E G Product Summary V DS R DS(on),max ID -30 V 6.

Published: Feb 20, 2016 |